BUK9635-55A,118
- Mfr.Part #
- BUK9635-55A,118
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- N-CHANNEL TRENCHMOS LOGIC LEVEL
- Stock
- 1,070
- In Stock :
- 1,070
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 96 ns
- Max Dual Supply Voltage :
- 55V
- Power Dissipation-Max :
- 85W Tc
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 25A, 10V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±10V
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Rise Time :
- 36ns
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Avalanche Energy Rating (Eas) :
- 48 mJ
- Surface Mount :
- yes
- Contact Plating :
- Tin
- Current - Continuous Drain (Id) @ 25°C :
- 34A Tc
- Continuous Drain Current (ID) :
- 34A
- Published :
- 2011
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Fall Time (Typ) :
- 73 ns
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Factory Lead Time :
- 12 Weeks
- RoHS Status :
- ROHS3 Compliant
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Drain to Source Breakdown Voltage :
- 55V
- Pin Count :
- 3
- Turn On Delay Time :
- 6 ns
- Peak Reflow Temperature (Cel) :
- 260
- Input Capacitance (Ciss) (Max) @ Vds :
- 1173pF @ 25V
- Power Dissipation :
- 85W
- Number of Terminations :
- 2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheets
- BUK9635-55A,118

N-Channel Tape & Reel (TR) 32m Ω @ 25A, 10V ±10V 1173pF @ 25V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK9635-55A,118 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 48 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1173pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 34A amps.In this device, the drain-source breakdown voltage is 55V and VGS=55V, so the drain-source breakdown voltage is 55V in this case.It is [96 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 6 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.As it is powered by 55V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (5V 10V).
BUK9635-55A,118 Features
the avalanche energy rating (Eas) is 48 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 96 ns
BUK9635-55A,118 Applications
There are a lot of Nexperia USA Inc.
BUK9635-55A,118 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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