BUK9635-100A,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Power Dissipation-Max :

149W Tc

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

34m Ω @ 25A, 10V

Reach Compliance Code :

not_compliant

Series :

TrenchMOS™

Current - Continuous Drain (Id) @ 25°C :

41A Tc

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±10V

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

100V

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

125 mJ

Published :

1997

Terminal Form :

Gull wing

Surface Mount :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

3573pF @ 25V

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.039Ohm

Drain Current-Max (Abs) (ID) :

41A

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

165A

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Terminal Position :

Single

Vgs(th) (Max) @ Id :

2V @ 1mA

Drain to Source Voltage (Vdss) :

100V

FET Type :

N-Channel

Number of Terminations :

2

Number of Elements :

1

HTS Code :

8541.29.00.75

JESD-30 Code :

R-PSSO-G2