BUK962R8-60E,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±10V

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

60V

Gate to Source Voltage (Vgs) :

15V

Plating :

Gold, Tin

Published :

2014

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Fall Time (Typ) :

81 ns

Number of Elements :

1

Material :

Brass

Input Capacitance (Ciss) (Max) @ Vds :

15600pF @ 25V

Number of Pins :

3

Power Dissipation-Max :

324W Tc

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Turn On Delay Time :

53 ns

Surface Mount :

yes

Continuous Drain Current (ID) :

120A

Gate Charge (Qg) (Max) @ Vgs :

92nC @ 5V

Drain-source On Resistance-Max :

0.0028Ohm

Number of Channels :

1

Pin Count :

3

Factory Lead Time :

12 Weeks

Max Dual Supply Voltage :

60V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Number of Terminations :

2

Rise Time :

88ns

Case Connection :

DRAIN

Reach Compliance Code :

not_compliant

Series :

Automotive, AEC-Q101, TrenchMOS™

Drive Voltage (Max Rds On,Min Rds On) :

5V

Termination :

Crimp

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 25A, 10V

Turn-Off Delay Time :

115 ns

FET Type :

N-Channel

Wire Gauge (Min) :

24 AWG

JESD-30 Code :

R-PSSO-G2

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Terminal Form :

Gull wing

Wire Gauge (Max) :

26 AWG

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Element Configuration :

Single