BUK962R1-40E,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

120A Tc

DS Breakdown Voltage-Min :

40V

Input Capacitance (Ciss) (Max) @ Vds :

13160pF @ 25V

Power Dissipation-Max :

293W Tc

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

87.8nC @ 5V

Reference Standard :

AEC-Q101; IEC-60134

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

622 mJ

Published :

2012

Drain to Source Voltage (Vdss) :

40V

Reach Compliance Code :

not_compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

120A

Pin Count :

3

Terminal Position :

Single

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 25A, 10V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Series :

TrenchMOS™

Drain-source On Resistance-Max :

0.0021Ohm

Pulsed Drain Current-Max (IDM) :

1078A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±10V

Operating Temperature :

-55°C~175°C TJ