BUK9628-100A,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Max Dual Supply Voltage :

100V

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

166W Tc

Mounting Type :

Surface Mount

Number of Pins :

3

Case Connection :

DRAIN

Turn On Delay Time :

11 ns

Vgs (Max) :

±10V

Element Configuration :

Single

Continuous Drain Current (ID) :

49A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Avalanche Energy Rating (Eas) :

45 mJ

Drain-source On Resistance-Max :

0.028Ohm

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Series :

Automotive, AEC-Q101, TrenchMOS™

Fall Time (Typ) :

106 ns

Rds On (Max) @ Id, Vgs :

27m Ω @ 25A, 10V

Drain to Source Breakdown Voltage :

100V

FET Type :

N-Channel

Surface Mount :

yes

Pin Count :

3

Contact Plating :

Tin

ECCN Code :

EAR99

Published :

2011

Rise Time :

58ns

Turn-Off Delay Time :

250 ns

Transistor Application :

SWITCHING

Number of Elements :

1

Radiation Hardening :

No

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

49A Tc

Input Capacitance (Ciss) (Max) @ Vds :

4293pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

10V

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Power Dissipation :

166W

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB