BUK9623-75A,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

213A

Power Dissipation-Max :

138W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

120 mJ

Vgs(th) (Max) @ Id :

2V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

53A Tc

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

53A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

22m Ω @ 25A, 10V

Surface Mount :

yes

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Tin (Sn)

Drain to Source Voltage (Vdss) :

75V

Pin Count :

3

Vgs (Max) :

±10V

HTS Code :

8541.29.00.75

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Published :

2011

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

3120pF @ 25V

DS Breakdown Voltage-Min :

75V

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Series :

TrenchMOS™

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.026ohm