BUK9618-55A,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.019Ohm

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

40

Reach Compliance Code :

not_compliant

Rds On (Max) @ Id, Vgs :

16m Ω @ 25A, 10V

Pulsed Drain Current-Max (IDM) :

246A

Avalanche Energy Rating (Eas) :

127 mJ

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±15V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

HTS Code :

8541.29.00.75

DS Breakdown Voltage-Min :

55V

Current - Continuous Drain (Id) @ 25°C :

61A Tc

Number of Elements :

1

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Series :

TrenchMOS™

Power Dissipation-Max :

136W Tc

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

61A

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 1mA

Published :

2001

Drain to Source Voltage (Vdss) :

55V

ECCN Code :

EAR99

FET Type :

N-Channel

Number of Terminations :

2

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single