BUK9614-60E,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

96W Tc

Drain to Source Breakdown Voltage :

60V

Input Capacitance (Ciss) (Max) @ Vds :

2651pF @ 25V

Pulsed Drain Current-Max (IDM) :

224A

Continuous Drain Current (ID) :

56A

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

2.1V @ 1mA

Pin Count :

3

Number of Pins :

3

Rise Time :

22.4ns

Factory Lead Time :

12 Weeks

Number of Elements :

1

Series :

Automotive, AEC-Q101, TrenchMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

16.9 ns

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Contact Plating :

Tin

Max Dual Supply Voltage :

60V

Element Configuration :

Single

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±10V

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

15V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

35.7 ns

Fall Time (Typ) :

22.9 ns

Number of Channels :

1

Published :

2015

Rds On (Max) @ Id, Vgs :

12.8m Ω @ 15A, 10V

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

5V

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 5V

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Packaging :

Tape and Reel (TR)