BUK9611-55A,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

330 mJ

Surface Mount :

yes

ECCN Code :

EAR99

Case Connection :

DRAIN

Number of Terminations :

2

Power Dissipation-Max :

166W Tc

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

266A

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

55V

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Terminal Position :

Single

Terminal Form :

Gull wing

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 1mA

HTS Code :

8541.29.00.75

Input Capacitance (Ciss) (Max) @ Vds :

4230pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Series :

TrenchMOS™

JESD-609 Code :

e3

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±10V

Drain to Source Voltage (Vdss) :

55V

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

10m Ω @ 25A, 10V

Drain Current-Max (Abs) (ID) :

75A

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.012Ohm