BUK9610-55A,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2001

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

100A

Pulsed Drain Current-Max (IDM) :

400A

Time@Peak Reflow Temperature-Max (s) :

40

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

4307pF @ 25V

Number of Elements :

1

Vgs (Max) :

±15V

Drain to Source Voltage (Vdss) :

55V

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 5V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

333 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Series :

TrenchMOS™

Pin Count :

3

Terminal Form :

Gull wing

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

9m Ω @ 25A, 10V

Number of Terminations :

2

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

200W Tc

Vgs(th) (Max) @ Id :

2V @ 1mA

DS Breakdown Voltage-Min :

55V

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

HTS Code :

8541.29.00.75

Drain-source On Resistance-Max :

0.011Ohm

Terminal Finish :

Tin (Sn)