BUK9606-75B,118
- Mfr.Part #
- BUK9606-75B,118
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- NEXPERIA BUK9606-75B - 75A, 75V,
- Stock
- 779
- In Stock :
- 779
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Turn-Off Delay Time :
- 273 ns
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Max Dual Supply Voltage :
- 75V
- Power Dissipation-Max :
- 300W Tc
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 75V
- Gate to Source Voltage (Vgs) :
- 15V
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.0066Ohm
- Fall Time (Typ) :
- 116 ns
- Transistor Application :
- SWITCHING
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 95nC @ 5V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Avalanche Energy Rating (Eas) :
- 852 mJ
- Turn On Delay Time :
- 68 ns
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 75A
- Power Dissipation :
- 300W
- JESD-30 Code :
- R-PSSO-G2
- Input Capacitance (Ciss) (Max) @ Vds :
- 11693pF @ 25V
- Number of Pins :
- 3
- Rise Time :
- 144ns
- FET Type :
- N-Channel
- Vgs (Max) :
- ±15V
- Case Connection :
- DRAIN
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Published :
- 2011
- Rds On (Max) @ Id, Vgs :
- 5.5m Ω @ 25A, 10V
- Contact Plating :
- Tin
- Factory Lead Time :
- 12 Weeks
- Datasheets
- BUK9606-75B,118

N-Channel Tape & Reel (TR) 5.5m Ω @ 25A, 10V ±15V 11693pF @ 25V 95nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK9606-75B,118 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 852 mJ.The maximum input capacitance of this device is 11693pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 75A.When VGS=75V, and ID flows to VDS at 75VVDS, the drain-source breakdown voltage is 75V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 273 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 68 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 75V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (5V 10V), this device helps reduce its power consumption.
BUK9606-75B,118 Features
the avalanche energy rating (Eas) is 852 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 273 ns
BUK9606-75B,118 Applications
There are a lot of Nexperia USA Inc.
BUK9606-75B,118 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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