BUK9606-40B,118
- Mfr.Part #
- BUK9606-40B,118
- Manufacturer
- Nexperia
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 75A D2PAK
- Stock
- 1,929
- In Stock :
- 1,929
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 132 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 5V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Published :
- 2011
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Drain to Source Breakdown Voltage :
- 40V
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Dual Supply Voltage :
- 40V
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 203W Tc
- Continuous Drain Current (ID) :
- 129A
- FET Type :
- N-Channel
- Contact Plating :
- Tin
- Fall Time (Typ) :
- 92 ns
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- JESD-609 Code :
- e3
- Drain Current-Max (Abs) (ID) :
- 75A
- Rise Time :
- 145ns
- Power Dissipation :
- 203W
- Input Capacitance (Ciss) (Max) @ Vds :
- 4901pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±15V
- Avalanche Energy Rating (Eas) :
- 494 mJ
- Radiation Hardening :
- No
- Turn On Delay Time :
- 43 ns
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lead Free :
- Lead Free
- Factory Lead Time :
- 12 Weeks
- Pin Count :
- 3
- JESD-30 Code :
- R-PSSO-G2
- Surface Mount :
- yes
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 15V
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 25A, 10V
- Datasheets
- BUK9606-40B,118

N-Channel Tape & Reel (TR) 5m Ω @ 25A, 10V ±15V 4901pF @ 25V 44nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK9606-40B,118 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 494 mJ.The maximum input capacitance of this device is 4901pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 129A.When VGS=40V, and ID flows to VDS at 40VVDS, the drain-source breakdown voltage is 40V in this device.As shown in the table below, the drain current of this device is 75A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 132 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 43 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 40V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (5V 10V), this device helps reduce its power consumption.
BUK9606-40B,118 Features
the avalanche energy rating (Eas) is 494 mJ
a continuous drain current (ID) of 129A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 132 ns
BUK9606-40B,118 Applications
There are a lot of Nexperia USA Inc.
BUK9606-40B,118 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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