BUK9605-30A,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

230W

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Radiation Hardening :

No

Fall Time (Typ) :

320 ns

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

Additional Feature :

LOGIC LEVEL COMPATIBLE

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Vgs (Max) :

±10V

Transistor Element Material :

SILICON

Series :

Automotive, AEC-Q101, TrenchMOS™

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

500 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Rise Time :

220ns

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Drain-source On Resistance-Max :

0.0054Ohm

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Max Dual Supply Voltage :

30V

Number of Pins :

3

Gate to Source Voltage (Vgs) :

10V

Number of Terminations :

2

Turn-Off Delay Time :

345 ns

Power Dissipation-Max :

230W Tc

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 1mA

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

400A

Input Capacitance (Ciss) (Max) @ Vds :

8600pF @ 25V

ECCN Code :

EAR99

Published :

2011

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 25A, 10V

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Turn On Delay Time :

45 ns

Continuous Drain Current (ID) :

75A