BUK9540-100A,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 5V

Series :

TrenchMOS™

Input Capacitance (Ciss) (Max) @ Vds :

3072pF @ 25V

Vgs (Max) :

±15V

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 1mA

JESD-609 Code :

e3

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

159A

DS Breakdown Voltage-Min :

100V

Rds On (Max) @ Id, Vgs :

39m Ω @ 25A, 10V

Packaging :

Tube

Power Dissipation-Max :

158W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

100V

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.043Ohm

Avalanche Energy Rating (Eas) :

182 mJ

Terminal Finish :

Tin (Sn)

Pin Count :

3

HTS Code :

8541.29.00.75

JEDEC-95 Code :

TO-220AB

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2000

Current - Continuous Drain (Id) @ 25°C :

39A Tc

Transistor Element Material :

SILICON

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

39A

Terminal Position :

Single