BUK9535-100A,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

41A Tc

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

165A

Drain to Source Voltage (Vdss) :

100V

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

149W Tc

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

2V @ 1mA

Packaging :

Tube

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

3573pF @ 25V

Pin Count :

3

HTS Code :

8541.29.00.75

Package / Case :

TO-220-3

ECCN Code :

EAR99

FET Type :

N-Channel

Transistor Application :

SWITCHING

Number of Terminations :

3

DS Breakdown Voltage-Min :

100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±10V

Series :

TrenchMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

41A

Rds On (Max) @ Id, Vgs :

34m Ω @ 25A, 10V

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.039Ohm

JESD-30 Code :

R-PSFM-T3

Avalanche Energy Rating (Eas) :

125 mJ

Mounting Type :

Through Hole