BUK9529-100B,127
- Mfr.Part #
- BUK9529-100B,127
- Manufacturer
- Nexperia
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 46A TO220AB
- Stock
- 43,848
- In Stock :
- 43,848
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Rise Time :
- 86ns
- Turn-Off Delay Time :
- 96 ns
- JEDEC-95 Code :
- TO-220AB
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 25A, 10V
- Fall Time (Typ) :
- 46 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 157W Tc
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Max Dual Supply Voltage :
- 100V
- Turn On Delay Time :
- 30 ns
- Current - Continuous Drain (Id) @ 25°C :
- 46A Tc
- RoHS Status :
- RoHS Compliant
- Pulsed Drain Current-Max (IDM) :
- 186A
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 4360pF @ 25V
- Surface Mount :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 5V
- Package / Case :
- TO-220-3
- Power Dissipation :
- 157W
- Continuous Drain Current (ID) :
- 46A
- Number of Elements :
- 1
- Series :
- TrenchMOS™
- Gate to Source Voltage (Vgs) :
- 15V
- Case Connection :
- DRAIN
- Radiation Hardening :
- No
- Vgs (Max) :
- ±15V
- HTS Code :
- 8541.29.00.75
- Drain to Source Breakdown Voltage :
- 100V
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Avalanche Energy Rating (Eas) :
- 152 mJ
- JESD-609 Code :
- e3
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Datasheets
- BUK9529-100B,127

N-Channel Tube 27m Ω @ 25A, 10V ±15V 4360pF @ 25V 33nC @ 5V TO-220-3
BUK9529-100B,127 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 152 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4360pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 46A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 96 ns.Peak drain current for this device is 186A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 30 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 100V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
BUK9529-100B,127 Features
the avalanche energy rating (Eas) is 152 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 96 ns
based on its rated peak drain current 186A.
BUK9529-100B,127 Applications
There are a lot of Nexperia USA Inc.
BUK9529-100B,127 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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