BUK9523-75A,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

53A Tc

Surface Mount :

No

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

3120pF @ 25V

Power Dissipation-Max :

138W Tc

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

213A

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Packaging :

Tube

DS Breakdown Voltage-Min :

75V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

TrenchMOS™

JESD-30 Code :

R-PSFM-T3

Pin Count :

3

Published :

1997

Drain to Source Voltage (Vdss) :

75V

Avalanche Energy Rating (Eas) :

120 mJ

Number of Elements :

1

ECCN Code :

EAR99

Vgs (Max) :

±10V

JESD-609 Code :

e3

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

53A

Drain-source On Resistance-Max :

0.026ohm

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

22m Ω @ 25A, 10V

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

2V @ 1mA

Qualification Status :

Not Qualified

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

HTS Code :

8541.29.00.75

Transistor Application :

SWITCHING