BUK95180-100A,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.2Ohm

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 1mA

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Avalanche Energy Rating (Eas) :

1.5 mJ

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2000

JESD-609 Code :

e3

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

619pF @ 25V

HTS Code :

8541.29.00.75

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

100V

Packaging :

Tube

Transistor Application :

SWITCHING

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Series :

TrenchMOS™

Power Dissipation-Max :

54W Tc

Vgs (Max) :

±15V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

44A

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

11A

DS Breakdown Voltage-Min :

100V

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

173m Ω @ 5A, 10V

Package / Case :

TO-220-3

Pin Count :

3

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V