BUK9512-55B,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±15V

Gate to Source Voltage (Vgs) :

15V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Power Dissipation-Max :

157W Tc

Rds On (Max) @ Id, Vgs :

10m Ω @ 25A, 10V

Packaging :

Tube

Power Dissipation :

157W

Radiation Hardening :

No

JESD-609 Code :

e3

Pin Count :

3

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

3693pF @ 25V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rise Time :

101ns

Surface Mount :

No

Max Dual Supply Voltage :

55V

Turn-Off Delay Time :

96 ns

Case Connection :

DRAIN

Turn On Delay Time :

19 ns

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 5V

Continuous Drain Current (ID) :

79A

Operating Temperature :

-55°C~175°C TJ

Contact Plating :

Tin

Series :

TrenchMOS™

Package / Case :

TO-220-3

Drain Current-Max (Abs) (ID) :

75A

Fall Time (Typ) :

75 ns

Drain to Source Breakdown Voltage :

55V

Number of Elements :

1

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

FET Type :

N-Channel

Number of Pins :

3

Vgs(th) (Max) @ Id :

2V @ 1mA

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

75A Tc