BUK9511-55A,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Vgs(th) (Max) @ Id :

2V @ 1mA

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.012Ohm

Terminal Position :

Single

Number of Elements :

1

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

75A

Drain to Source Voltage (Vdss) :

55V

HTS Code :

8541.29.00.75

JESD-609 Code :

e3

Series :

TrenchMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

Case Connection :

DRAIN

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

4230pF @ 25V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Power Dissipation-Max :

166W Tc

Vgs (Max) :

±10V

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

55V

Reach Compliance Code :

Compliant

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

10m Ω @ 25A, 10V

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

266A

Avalanche Energy Rating (Eas) :

330 mJ

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Pin Count :

3