BUK9510-55A,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

200W Tc

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

400A

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

75A

Drain to Source Voltage (Vdss) :

55V

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.011Ohm

FET Type :

N-Channel

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2001

Terminal Finish :

Matte Tin (Sn)

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

55V

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

333 mJ

Pin Count :

3

Rds On (Max) @ Id, Vgs :

9m Ω @ 25A, 10V

Vgs(th) (Max) @ Id :

2V @ 1mA

HTS Code :

8541.29.00.75

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Series :

TrenchMOS™

Packaging :

Tube

ECCN Code :

EAR99

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

4307pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±15V