BUK9509-40B,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchMOS™

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Rise Time :

106ns

Vgs(th) (Max) @ Id :

2V @ 1mA

Packaging :

Tube

Power Dissipation :

157W

Contact Plating :

Tin

FET Type :

N-Channel

Vgs (Max) :

±15V

Turn-Off Delay Time :

108 ns

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

15V

JESD-609 Code :

e3

Number of Terminations :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Surface Mount :

No

Number of Pins :

3

RoHS Status :

RoHS Compliant

Max Dual Supply Voltage :

40V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

7m Ω @ 25A, 10V

Radiation Hardening :

No

ECCN Code :

EAR99

Package / Case :

TO-220-3

Drain to Source Breakdown Voltage :

40V

Power Dissipation-Max :

157W Tc

Drain Current-Max (Abs) (ID) :

75A

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Turn On Delay Time :

29 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

89 ns

Pin Count :

3

Continuous Drain Current (ID) :

95A