BUK9506-75B,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Radiation Hardening :

No

Power Dissipation :

300W

Packaging :

Tube

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

2V @ 1mA

Additional Feature :

LOGIC LEVEL COMPATIBLE

Transistor Element Material :

SILICON

Series :

TrenchMOS™

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

153A

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 25A, 10V

Max Dual Supply Voltage :

75V

Turn On Delay Time :

68 ns

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

852 mJ

Fall Time (Typ) :

116 ns

Package / Case :

TO-220-3

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Power Dissipation-Max :

300W Tc

Drain Current-Max (Abs) (ID) :

75A

JESD-609 Code :

e3

Vgs (Max) :

±15V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

11693pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 5V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Pin Count :

3

Rise Time :

144ns

Gate to Source Voltage (Vgs) :

15V

Case Connection :

DRAIN

Turn-Off Delay Time :

273 ns

Drain to Source Breakdown Voltage :

75V

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Drain-source On Resistance-Max :

0.0066Ohm

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3