BUK9506-55B,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Published :

2004

Additional Feature :

LOGIC LEVEL COMPATIBLE

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

7565pF @ 25V

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

587A

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

75A Tc

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

679 mJ

Drain to Source Voltage (Vdss) :

55V

Vgs(th) (Max) @ Id :

2V @ 1mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Number of Elements :

1

DS Breakdown Voltage-Min :

55V

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

258W Tc

Drain Current-Max (Abs) (ID) :

75A

HTS Code :

8541.29.00.75

Series :

TrenchMOS™

Drain-source On Resistance-Max :

0.0064Ohm

Rds On (Max) @ Id, Vgs :

5.4m Ω @ 25A, 10V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

3

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Surface Mount :

No

Vgs (Max) :

±15V

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified