BUK9505-30A,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1999

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

No

Vgs (Max) :

±10V

Mounting Type :

Through Hole

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

230W Tc

Series :

TrenchMOS™

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.0054Ohm

Transistor Element Material :

SILICON

Packaging :

Tube

Number of Terminations :

3

HTS Code :

8541.29.00.75

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Position :

Single

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

400A

Rds On (Max) @ Id, Vgs :

4.6m Ω @ 25A, 10V

Avalanche Energy Rating (Eas) :

500 mJ

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2V @ 1mA

DS Breakdown Voltage-Min :

30V

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

75A

Qualification Status :

Not Qualified

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

8600pF @ 25V

JESD-609 Code :

e3

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-220AB