BUK9245-55A,118

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Element Configuration :

Single

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

15V

Number of Terminations :

2

Fall Time (Typ) :

112 ns

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

55V

Rise Time :

132ns

Drain Current-Max (Abs) (ID) :

28A

Rds On (Max) @ Id, Vgs :

40m Ω @ 5A, 10V

Number of Elements :

1

Drain-source On Resistance-Max :

0.05Ohm

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Factory Lead Time :

26 Weeks

Continuous Drain Current (ID) :

175mA

Turn-Off Delay Time :

38 ns

JESD-609 Code :

e3

Power Dissipation-Max :

70W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1006pF @ 25V

Series :

Automotive, AEC-Q101, TrenchMOS™

Vgs (Max) :

±15V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 1mA

Number of Pins :

3

Avalanche Energy Rating (Eas) :

62 mJ

JESD-30 Code :

R-PSSO-G2

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Turn On Delay Time :

10 ns

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Case Connection :

DRAIN

JEDEC-95 Code :

TO-252AA

Max Dual Supply Voltage :

55V

Mount :

Through Hole

Power Dissipation :

70W

Terminal Form :

Gull wing

Published :

2010

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

Transistor Application :

SWITCHING

Pin Count :

3

RoHS Status :

ROHS3 Compliant