BUK9237-55A,118
- Mfr.Part #
- BUK9237-55A,118
- Manufacturer
- Nexperia
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 32A DPAK
- Stock
- 83,818
- In Stock :
- 83,818
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±15V
- Pin Count :
- 3
- Power Dissipation-Max :
- 77W Tc
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 32A
- Number of Terminations :
- 2
- Rise Time :
- 36ns
- Power Dissipation :
- 77W
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 95 ns
- Current - Continuous Drain (Id) @ 25°C :
- 32A Tc
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Dual Supply Voltage :
- 55V
- Gate Charge (Qg) (Max) @ Vgs :
- 17.6nC @ 5V
- JEDEC-95 Code :
- TO-252AA
- Turn On Delay Time :
- 6 ns
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 15V
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Contact Plating :
- Tin
- Avalanche Energy Rating (Eas) :
- 76 mJ
- FET Type :
- N-Channel
- Surface Mount :
- yes
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 15A, 10V
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1236pF @ 25V
- Fall Time (Typ) :
- 73 ns
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 26 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Application :
- SWITCHING
- Published :
- 2010
- Drain to Source Breakdown Voltage :
- 55V
- Datasheets
- BUK9237-55A,118

N-Channel Tape & Reel (TR) 33m Ω @ 15A, 10V ±15V 1236pF @ 25V 17.6nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
BUK9237-55A,118 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 76 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1236pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 32A.With a drain-source breakdown voltage of 55V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 55V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 95 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 55V.Using drive voltage (5V 10V) reduces this device's overall power consumption.
BUK9237-55A,118 Features
the avalanche energy rating (Eas) is 76 mJ
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 95 ns
BUK9237-55A,118 Applications
There are a lot of Nexperia USA Inc.
BUK9237-55A,118 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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