BUK7Y9R9-80EX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

498pF @ 25V

JEDEC-95 Code :

MO-235

Element Configuration :

Single

Case Connection :

DRAIN

Series :

TrenchMOS™

Number of Channels :

1

Drain to Source Breakdown Voltage :

80V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Package / Case :

SC-100, SOT-669

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

89A Tc

Rise Time :

23ns

Number of Pins :

4

Transistor Application :

SWITCHING

Number of Terminations :

4

Continuous Drain Current (ID) :

89A

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Turn-Off Delay Time :

34 ns

Factory Lead Time :

12 Weeks

Published :

2013

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

15 ns

Power Dissipation-Max :

195W Tc

Pin Count :

4

Vgs(th) (Max) @ Id :

4V @ 1mA

Fall Time (Typ) :

21 ns

Power Dissipation :

195W

Rds On (Max) @ Id, Vgs :

98m Ω @ 5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

80V

Gate Charge (Qg) (Max) @ Vgs :

51.6nC @ 10V

Drain-source On Resistance-Max :

0.0099Ohm

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)