BUK7Y98-80EX
- Mfr.Part #
- BUK7Y98-80EX
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 12.3A LFPAK56
- Stock
- 43,597
- In Stock :
- 43,597
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 12.3A
- Number of Channels :
- 1
- Package / Case :
- SC-100, SOT-669
- Max Dual Supply Voltage :
- 80V
- Turn On Delay Time :
- 3.9 ns
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 3.7 ns
- Rds On (Max) @ Id, Vgs :
- 98m Ω @ 5A, 10V
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 8.5nC @ 10V
- Avalanche Energy Rating (Eas) :
- 9.02 mJ
- Pin Count :
- 4
- Surface Mount :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 498pF @ 25V
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 4
- Drain to Source Breakdown Voltage :
- 80V
- FET Type :
- N-Channel
- Number of Terminations :
- 4
- Rise Time :
- 3.5ns
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.098Ohm
- Case Connection :
- DRAIN
- Published :
- 2013
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 12.3A Tc
- Turn-Off Delay Time :
- 7.3 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- TrenchMOS™
- JEDEC-95 Code :
- MO-235
- Factory Lead Time :
- 12 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 37W Tc
- Vgs (Max) :
- ±20V
- Datasheets
- BUK7Y98-80EX

N-Channel Tape & Reel (TR) 98m Ω @ 5A, 10V ±20V 498pF @ 25V 8.5nC @ 10V SC-100, SOT-669
BUK7Y98-80EX Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 9.02 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 498pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 12.3A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 80V, and this device has a drainage-to-source breakdown voltage of 80VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 7.3 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 3.9 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 80V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
BUK7Y98-80EX Features
the avalanche energy rating (Eas) is 9.02 mJ
a continuous drain current (ID) of 12.3A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 7.3 ns
BUK7Y98-80EX Applications
There are a lot of Nexperia USA Inc.
BUK7Y98-80EX applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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