BUK7Y8R7-60EX
- Mfr.Part #
- BUK7Y8R7-60EX
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 87A LFPAK56
- Stock
- 3,317
- In Stock :
- 3,317
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Additional Feature :
- AVALANCHE RATED
- Continuous Drain Current (ID) :
- 87A
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 87A Tc
- Series :
- TrenchMOS™
- Published :
- 2013
- Drain-source On Resistance-Max :
- 0.0087Ohm
- Pin Count :
- 4
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 31 ns
- Fall Time (Typ) :
- 19 ns
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 60V
- Number of Terminations :
- 4
- Package / Case :
- SC-100, SOT-669
- Vgs (Max) :
- ±20V
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Power Dissipation-Max :
- 147W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Rise Time :
- 16ns
- Power Dissipation :
- 147W
- JEDEC-95 Code :
- MO-235
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 12 Weeks
- Case Connection :
- DRAIN
- Number of Pins :
- 4
- Max Dual Supply Voltage :
- 60V
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 8.7m Ω @ 20A, 10V
- Avalanche Energy Rating (Eas) :
- 76.2 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 3159pF @ 25V
- Turn On Delay Time :
- 10 ns
- Datasheets
- BUK7Y8R7-60EX

N-Channel Tape & Reel (TR) 8.7m Ω @ 20A, 10V ±20V 3159pF @ 25V 46nC @ 10V SC-100, SOT-669
BUK7Y8R7-60EX Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 76.2 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3159pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 31 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 60V.In addition to reducing power consumption, this device uses drive voltage (10V).
BUK7Y8R7-60EX Features
the avalanche energy rating (Eas) is 76.2 mJ
a continuous drain current (ID) of 87A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 31 ns
BUK7Y8R7-60EX Applications
There are a lot of Nexperia USA Inc.
BUK7Y8R7-60EX applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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