BUK7Y7R8-80EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

5347pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

238W

FET Type :

N-Channel

Fall Time (Typ) :

24 ns

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

63.3nC @ 10V

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

Number of Terminations :

4

Continuous Drain Current (ID) :

100A

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 1mA

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~175°C TJ

Package / Case :

SC-100, SOT-669

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Turn On Delay Time :

16 ns

Transistor Element Material :

SILICON

Pin Count :

4

Max Dual Supply Voltage :

80V

Case Connection :

DRAIN

Power Dissipation-Max :

238W Tc

Drain-source On Resistance-Max :

0.0078Ohm

Rise Time :

25ns

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Number of Channels :

1

JEDEC-95 Code :

MO-235

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

7.8m Ω @ 25A, 10V

Published :

2013

Turn-Off Delay Time :

43 ns

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

80V

Terminal Position :

Single