BUK7Y7R2-60EX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

88.2 mJ

Drain to Source Breakdown Voltage :

60V

Package / Case :

SC-100, SOT-669

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Turn On Delay Time :

11.4 ns

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Surface Mount :

yes

Drain to Source Resistance :

7.2mOhm

Rise Time :

18.3ns

Case Connection :

DRAIN

Mounting Type :

Surface Mount

FET Type :

N-Channel

Terminal Position :

Single

Turn-Off Delay Time :

33.4 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

20 ns

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

MO-235

Max Dual Supply Voltage :

60V

Number of Pins :

4

Transistor Element Material :

SILICON

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Contact Plating :

Tin

Number of Terminations :

4

Number of Channels :

1

Published :

2013

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

167W Tc

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

100A