BUK7Y65-100EX
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- Mfr.Part #
- BUK7Y65-100EX
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 19A LFPAK56
- Stock
- 17,278
- In Stock ：
- 17,278
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 12.4 ns
- Current - Continuous Drain (Id) @ 25°C :
- 19A Tc
- Pin Count :
- 4
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 20V
- Hole Diameter :
- 22.225 mm
- Series :
- TrenchMOS™
- Panel Thickness :
- 1.5748mm
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 4
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 8 ns
- Diameter :
- 12.7mm
- JEDEC-95 Code :
- MO-235
- Package / Case :
- SC-100, SOT-669
- Gate Charge (Qg) (Max) @ Vgs :
- 17.8nC @ 10V
- Flange Diameter :
- 24.5872 mm
- Rise Time :
- 7.5ns
- Material :
- Metal, Nylon
- Drain-source On Resistance-Max :
- 0.065Ohm
- Color :
- Black
- Terminal Form :
- Gull wing
- Number of Pins :
- 4
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 76A
- Published :
- 2013
- Turn On Delay Time :
- 5.3 ns
- Continuous Drain Current (ID) :
- 19A
- Additional Feature :
- AVALANCHE RATED
- Height :
- 16.002mm
- Power Dissipation-Max :
- 64W Tc
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1023pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 25.3 mJ
- Factory Lead Time :
- 12 Weeks
- Max Dual Supply Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Number of Channels :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 5A, 10V
- Surface Mount :
- yes
- Datasheets
- BUK7Y65-100EX
N-Channel Tape & Reel (TR) 65m Ω @ 5A, 10V ±20V 1023pF @ 25V 17.8nC @ 10V SC-100, SOT-669
BUK7Y65-100EX Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 25.3 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1023pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 19A amps.It is [12.4 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 76A.A turn-on delay time of 5.3 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 100V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
BUK7Y65-100EX Features
the avalanche energy rating (Eas) is 25.3 mJ
a continuous drain current (ID) of 19A
the turn-off delay time is 12.4 ns
based on its rated peak drain current 76A.
BUK7Y65-100EX Applications
There are a lot of Nexperia USA Inc.
BUK7Y65-100EX applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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