BUK7Y65-100EX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

Color :

Black

Power Dissipation-Max :

64W Tc

Avalanche Energy Rating (Eas) :

25.3 mJ

Rise Time :

7.5ns

Turn On Delay Time :

5.3 ns

Drain-source On Resistance-Max :

0.065Ohm

Series :

TrenchMOS™

Number of Terminations :

4

Flange Diameter :

24.5872 mm

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

76A

Turn-Off Delay Time :

12.4 ns

Operating Mode :

ENHANCEMENT MODE

Panel Thickness :

1.5748mm

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1023pF @ 25V

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Diameter :

12.7mm

Material :

Metal, Nylon

Pin Count :

4

Vgs(th) (Max) @ Id :

4V @ 1mA

Number of Channels :

1

Max Dual Supply Voltage :

100V

Terminal Form :

Gull wing

Fall Time (Typ) :

8 ns

Transistor Application :

SWITCHING

Number of Elements :

1

Published :

2013

JEDEC-95 Code :

MO-235

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Hole Diameter :

22.225 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

65m Ω @ 5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

17.8nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Package / Case :

SC-100, SOT-669

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Height :

16.002mm

Number of Pins :

4

Case Connection :

DRAIN

Continuous Drain Current (ID) :

19A