BUK7Y59-60EX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

3.8 ns

Max Dual Supply Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

Rds On (Max) @ Id, Vgs :

59m Ω @ 5A, 10V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

37W Tc

Drain to Source Breakdown Voltage :

60V

Continuous Drain Current (ID) :

17A

Additional Feature :

AVALANCHE RATED

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

5.2 ns

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

JEDEC-95 Code :

MO-235

Number of Pins :

4

Element Configuration :

Single

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

8.8 mJ

Vgs(th) (Max) @ Id :

4V @ 1mA

Series :

TrenchMOS™

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Rise Time :

5.5ns

Number of Elements :

1

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

494pF @ 25V

Published :

2013

Number of Channels :

1

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Package / Case :

SC-100, SOT-669

Turn-Off Delay Time :

6.5 ns

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

4

Pulsed Drain Current-Max (IDM) :

67A

Drain-source On Resistance-Max :

0.059Ohm

Terminal Form :

Gull wing