BUK7Y59-60EX
- Mfr.Part #
- BUK7Y59-60EX
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 17A LFPAK56
- Stock
- 1,352
- In Stock :
- 1,352
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 5.2 ns
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Rise Time :
- 5.5ns
- Surface Mount :
- yes
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.059Ohm
- Factory Lead Time :
- 12 Weeks
- Continuous Drain Current (ID) :
- 17A
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 59m Ω @ 5A, 10V
- Number of Pins :
- 4
- Published :
- 2013
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 8.8 mJ
- JEDEC-95 Code :
- MO-235
- Power Dissipation-Max :
- 37W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- SC-100, SOT-669
- Pulsed Drain Current-Max (IDM) :
- 67A
- Series :
- TrenchMOS™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 7.8nC @ 10V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 494pF @ 25V
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Element Configuration :
- Single
- Number of Channels :
- 1
- Turn On Delay Time :
- 3.8 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 4
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Max Dual Supply Voltage :
- 60V
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Breakdown Voltage :
- 60V
- Turn-Off Delay Time :
- 6.5 ns
- FET Type :
- N-Channel
- Datasheets
- BUK7Y59-60EX

N-Channel Tape & Reel (TR) 59m Ω @ 5A, 10V ±20V 494pF @ 25V 7.8nC @ 10V SC-100, SOT-669
BUK7Y59-60EX Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 8.8 mJ.A device's maximal input capacitance is 494pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 17A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 6.5 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 67A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 3.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 60V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).
BUK7Y59-60EX Features
the avalanche energy rating (Eas) is 8.8 mJ
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 6.5 ns
based on its rated peak drain current 67A.
BUK7Y59-60EX Applications
There are a lot of Nexperia USA Inc.
BUK7Y59-60EX applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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