BUK7Y41-80EX
- Mfr.Part #
- BUK7Y41-80EX
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 25A LFPAK56
- Stock
- 2,544
- In Stock :
- 2,544
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 4
- Avalanche Energy Rating (Eas) :
- 23.8 mJ
- JEDEC-95 Code :
- MO-235
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 5.3 ns
- Number of Elements :
- 1
- Published :
- 2013
- Power Dissipation-Max :
- 64W Tc
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Rise Time :
- 6.6ns
- Terminal Position :
- Single
- Pin Count :
- 4
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 41m Ω @ 5A, 10V
- Continuous Drain Current (ID) :
- 25A
- Transistor Application :
- SWITCHING
- Series :
- TrenchMOS™
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Fall Time (Typ) :
- 7.4 ns
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Drain to Source Breakdown Voltage :
- 80V
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1119pF @ 25V
- Number of Terminations :
- 4
- Number of Channels :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 11 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Lead Free :
- Lead Free
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- SC-100, SOT-669
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Max Dual Supply Voltage :
- 80V
- Gate Charge (Qg) (Max) @ Vgs :
- 16.4nC @ 10V
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- Datasheets
- BUK7Y41-80EX

N-Channel Tape & Reel (TR) 41m Ω @ 5A, 10V ±20V 1119pF @ 25V 16.4nC @ 10V SC-100, SOT-669
BUK7Y41-80EX Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 23.8 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1119pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 80V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 80V.As a result of its turn-off delay time, which is 11 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 5.3 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 80V.In addition to reducing power consumption, this device uses drive voltage (10V).
BUK7Y41-80EX Features
the avalanche energy rating (Eas) is 23.8 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 11 ns
BUK7Y41-80EX Applications
There are a lot of Nexperia USA Inc.
BUK7Y41-80EX applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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