BUK7Y3R5-40E,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

167W Tc

Additional Feature :

AVALANCHE RATED

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

49.4nC @ 10V

Max Dual Supply Voltage :

40V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

3583pF @ 25V

JESD-609 Code :

e3

Package / Case :

SC-100, SOT-669

JEDEC-95 Code :

MO-235

Pulsed Drain Current-Max (IDM) :

622A

Pin Count :

4

Number of Terminations :

4

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.0035Ohm

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Turn On Delay Time :

13.6 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Contact Plating :

Tin

Rise Time :

24.9ns

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

100A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Turn-Off Delay Time :

30 ns

Transistor Element Material :

SILICON

Published :

2015

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Fall Time (Typ) :

20.4 ns

Avalanche Energy Rating (Eas) :

135 mJ

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 1mA

Vgs (Max) :

±20V

FET Type :

N-Channel

Series :

Automotive, AEC-Q101, TrenchMOS™

Number of Elements :

1

Factory Lead Time :

12 Weeks

Number of Pins :

4

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 25A, 10V

Operating Mode :

ENHANCEMENT MODE