BUK7Y29-40EX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

37W Tc

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.029Ohm

Published :

2013

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

29m Ω @ 5A, 10V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

4.2 ns

Number of Terminations :

4

Packaging :

Tape and Reel (TR)

Rise Time :

5.5ns

Turn-Off Delay Time :

6 ns

Gate Charge (Qg) (Max) @ Vgs :

7.9nC @ 10V

Terminal Form :

Gull wing

Power Dissipation :

37W

Vgs (Max) :

±20V

JEDEC-95 Code :

MO-235

Element Configuration :

Single

Continuous Drain Current (ID) :

26A

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

40V

Number of Elements :

1

Number of Pins :

4

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 1mA

Package / Case :

SC-100, SOT-669

Number of Channels :

1

Avalanche Energy Rating (Eas) :

8.7 mJ

Max Dual Supply Voltage :

40V

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Input Capacitance (Ciss) (Max) @ Vds :

492pF @ 25V

Surface Mount :

yes

Pin Count :

4

Fall Time (Typ) :

5.1 ns

Series :

TrenchMOS™

Operating Temperature :

-55°C~175°C TJ