BUK7Y21-40E

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

617pF @ 25V

Element Configuration :

Single

FET Type :

N-Channel

Published :

2013

Surface Mount :

yes

Number of Terminations :

4

Mounting Type :

Surface Mount

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Fall Time (Typ) :

5.5 ns

Turn-Off Delay Time :

6.7 ns

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Max Dual Supply Voltage :

40V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 1mA

JEDEC-95 Code :

MO-235

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Transistor Application :

SWITCHING

Pin Count :

4

Series :

TrenchMOS™

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

45W Tc

Rds On (Max) @ Id, Vgs :

21m Ω @ 10A, 10V

Number of Pins :

4

Rise Time :

6.4ns

Continuous Drain Current (ID) :

33A

Packaging :

Tape and Reel (TR)

Additional Feature :

AVALANCHE RATED

Package / Case :

SC-100, SOT-669

Drain to Source Breakdown Voltage :

40V

Turn On Delay Time :

4.9 ns

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V