BUK7Y20-30B,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Number of Terminations :

4

Turn On Delay Time :

9.5 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Package / Case :

SC-100, SOT-669

Input Capacitance (Ciss) (Max) @ Vds :

688pF @ 25V

Surface Mount :

yes

Terminal Form :

Gull wing

Factory Lead Time :

12 Weeks

Case Connection :

DRAIN

Continuous Drain Current (ID) :

39.5A

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

4

Drain-source On Resistance-Max :

0.02Ohm

Contact Plating :

Tin

Published :

2010

Fall Time (Typ) :

10 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

59W Tc

Transistor Application :

SWITCHING

Series :

Automotive, AEC-Q101, TrenchMOS™

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

20m Ω @ 20A, 10V

JEDEC-95 Code :

MO-235

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

39.5A Tc

Turn-Off Delay Time :

20.5 ns

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

158A

Gate Charge (Qg) (Max) @ Vgs :

11.2nC @ 10V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

30V

Vgs(th) (Max) @ Id :

4V @ 1mA

JESD-609 Code :

e3

Rise Time :

18ns

Pin Count :

4