BUK7Y18-55B,115
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- Mfr.Part #
- BUK7Y18-55B,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- NOW NEXPERIA BUK7Y18-55B - 47.4A
- Stock
- 31,263
- In Stock ：
- 31,263
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 77 mJ
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 21.9nC @ 10V
- Package / Case :
- SC-100, SOT-669
- JEDEC-95 Code :
- MO-235
- Case Connection :
- DRAIN
- Factory Lead Time :
- 12 Weeks
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 47.4A
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 4
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 189A
- Max Dual Supply Voltage :
- 55V
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 20ns
- Rds On (Max) @ Id, Vgs :
- 18m Ω @ 20A, 10V
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 16 ns
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1263pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 47.4A Tc
- Drain-source On Resistance-Max :
- 0.018Ohm
- Contact Plating :
- Tin
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 85W Tc
- Terminal Form :
- Gull wing
- Number of Terminations :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 4
- Turn-Off Delay Time :
- 34 ns
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2010
- Surface Mount :
- yes
- Turn On Delay Time :
- 13 ns
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Datasheets
- BUK7Y18-55B,115
N-Channel Tape & Reel (TR) 18m Ω @ 20A, 10V ±20V 1263pF @ 25V 21.9nC @ 10V SC-100, SOT-669
BUK7Y18-55B,115 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 77 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1263pF @ 25V.This device conducts a continuous drain current (ID) of 47.4A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 34 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 189A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 55V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
BUK7Y18-55B,115 Features
the avalanche energy rating (Eas) is 77 mJ
a continuous drain current (ID) of 47.4A
the turn-off delay time is 34 ns
based on its rated peak drain current 189A.
BUK7Y18-55B,115 Applications
There are a lot of Nexperia USA Inc.
BUK7Y18-55B,115 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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