BUK7Y15-100EX
- Mfr.Part #
- BUK7Y15-100EX
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 68A LFPAK56
- Stock
- 15,348
- In Stock :
- 15,348
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 24 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3958pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 20A, 10V
- Published :
- 2013
- Continuous Drain Current (ID) :
- 68A
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- SC-100, SOT-669
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- Number of Pins :
- 4
- Turn On Delay Time :
- 11 ns
- Series :
- TrenchMOS™
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 54.5nC @ 10V
- FET Type :
- N-Channel
- Number of Terminations :
- 4
- Lead Free :
- Lead Free
- Current - Continuous Drain (Id) @ 25°C :
- 68A Tc
- Rise Time :
- 21ns
- Drain to Source Breakdown Voltage :
- 100V
- Turn-Off Delay Time :
- 43 ns
- Number of Elements :
- 1
- Power Dissipation-Max :
- 195W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Surface Mount :
- yes
- JEDEC-95 Code :
- MO-235
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Resistance :
- 15mOhm
- Max Dual Supply Voltage :
- 100V
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 4
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1
- Datasheets
- BUK7Y15-100EX

N-Channel Tape & Reel (TR) 15m Ω @ 20A, 10V ±20V 3958pF @ 25V 54.5nC @ 10V SC-100, SOT-669
BUK7Y15-100EX Overview
A device's maximum input capacitance is 3958pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 68A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 43 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 100V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
BUK7Y15-100EX Features
a continuous drain current (ID) of 68A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 43 ns
BUK7Y15-100EX Applications
There are a lot of Nexperia USA Inc.
BUK7Y15-100EX applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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