BUK7Y12-40EX
- Mfr.Part #
- BUK7Y12-40EX
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 52A LFPAK56
- Stock
- 45,994
- In Stock :
- 45,994
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Series :
- TrenchMOS™
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Additional Feature :
- AVALANCHE RATED
- Number of Elements :
- 1
- Number of Pins :
- 4
- Gate to Source Voltage (Vgs) :
- 20V
- Avalanche Energy Rating (Eas) :
- 22.75 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 10 ns
- Transistor Application :
- SWITCHING
- Published :
- 2013
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1039pF @ 25V
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 65W Tc
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 52A Tc
- Drain to Source Breakdown Voltage :
- 40V
- Number of Terminations :
- 4
- Fall Time (Typ) :
- 6 ns
- Surface Mount :
- yes
- Reach Compliance Code :
- not_compliant
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 10V
- Package / Case :
- SC-100, SOT-669
- Contact Plating :
- Tin
- Turn On Delay Time :
- 6 ns
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 15A, 10V
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 4
- Factory Lead Time :
- 12 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation :
- 65W
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 52A
- Max Dual Supply Voltage :
- 40V
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- JEDEC-95 Code :
- MO-235
- Rise Time :
- 7ns
- Transistor Element Material :
- SILICON
- Datasheets
- BUK7Y12-40EX

N-Channel Tape & Reel (TR) 12m Ω @ 15A, 10V ±20V 1039pF @ 25V 15nC @ 10V SC-100, SOT-669
BUK7Y12-40EX Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 22.75 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1039pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 10 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 6 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 40V.In addition to reducing power consumption, this device uses drive voltage (10V).
BUK7Y12-40EX Features
the avalanche energy rating (Eas) is 22.75 mJ
a continuous drain current (ID) of 52A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 10 ns
BUK7Y12-40EX Applications
There are a lot of Nexperia USA Inc.
BUK7Y12-40EX applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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