BUK7Y12-100EX
- Mfr.Part #
- BUK7Y12-100EX
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 85A LFPAK56
- Stock
- 4,460
- In Stock :
- 4,460
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 18ns
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~175°C TJ
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 20V
- Surface Mount :
- yes
- Number of Pins :
- 4
- Pulsed Drain Current-Max (IDM) :
- 339A
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Additional Feature :
- AVALANCHE RATED
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 25A, 10V
- Turn On Delay Time :
- 12 ns
- Power Dissipation :
- 238W
- Fall Time (Typ) :
- 66 ns
- Published :
- 2013
- Terminal Finish :
- Tin (Sn)
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5067pF @ 25V
- Series :
- TrenchMOS™
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pin Count :
- 4
- Package / Case :
- SC-100, SOT-669
- Current - Continuous Drain (Id) @ 25°C :
- 85A Tc
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- JEDEC-95 Code :
- MO-235
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation-Max :
- 238W Tc
- Reach Compliance Code :
- not_compliant
- Drain to Source Breakdown Voltage :
- 100V
- Number of Terminations :
- 4
- Continuous Drain Current (ID) :
- 85A
- Number of Channels :
- 1
- Factory Lead Time :
- 12 Weeks
- Turn-Off Delay Time :
- 66 ns
- Vgs (Max) :
- ±20V
- Max Dual Supply Voltage :
- 100V
- Transistor Element Material :
- SILICON
- Datasheets
- BUK7Y12-100EX

N-Channel Tape & Reel (TR) 12m Ω @ 25A, 10V ±20V 5067pF @ 25V 68nC @ 10V SC-100, SOT-669
BUK7Y12-100EX Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5067pF @ 25V.This device conducts a continuous drain current (ID) of 85A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 66 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 339A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 100V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
BUK7Y12-100EX Features
a continuous drain current (ID) of 85A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 339A.
BUK7Y12-100EX Applications
There are a lot of Nexperia USA Inc.
BUK7Y12-100EX applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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