BUK7Y12-100EX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Surface Mount :

yes

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

4

Fall Time (Typ) :

66 ns

Reach Compliance Code :

not_compliant

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e3

Continuous Drain Current (ID) :

85A

Turn-Off Delay Time :

66 ns

Package / Case :

SC-100, SOT-669

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Series :

TrenchMOS™

Pulsed Drain Current-Max (IDM) :

339A

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

12m Ω @ 25A, 10V

Pin Count :

4

Number of Channels :

1

FET Type :

N-Channel

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

238W Tc

Input Capacitance (Ciss) (Max) @ Vds :

5067pF @ 25V

Factory Lead Time :

12 Weeks

Vgs(th) (Max) @ Id :

4V @ 1mA

Turn On Delay Time :

12 ns

Rise Time :

18ns

Number of Elements :

1

Number of Pins :

4

Transistor Application :

SWITCHING

Published :

2013

Power Dissipation :

238W

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

MO-235

Terminal Finish :

Tin (Sn)

Max Dual Supply Voltage :

100V