BUK7Y113-100EX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

10.4nC @ 10V

Published :

2013

Series :

TrenchMOS™

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Pin Count :

4

Case Connection :

DRAIN

Number of Terminations :

4

Fall Time (Typ) :

5.9 ns

Continuous Drain Current (ID) :

12A

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Number of Elements :

1

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 1mA

Rds On (Max) @ Id, Vgs :

113m Ω @ 5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Turn-Off Delay Time :

7.7 ns

Rise Time :

5.9ns

Input Capacitance (Ciss) (Max) @ Vds :

601pF @ 25V

Surface Mount :

yes

Max Dual Supply Voltage :

100V

JEDEC-95 Code :

MO-235

Package / Case :

SC-100, SOT-669

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Transistor Element Material :

SILICON

Power Dissipation-Max :

45W Tc

Number of Pins :

4

Turn On Delay Time :

4 ns

Power Dissipation :

45W

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)