BUK7Y07-30B,115
- Mfr.Part #
- BUK7Y07-30B,115
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 75A LFPAK56
- Stock
- 1,783
- In Stock :
- 1,783
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 30ns
- Max Dual Supply Voltage :
- 30V
- Terminal Form :
- Gull wing
- Number of Terminations :
- 4
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 75A
- Surface Mount :
- yes
- Published :
- 2010
- Mounting Type :
- Surface Mount
- Number of Pins :
- 4
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Number of Elements :
- 1
- Fall Time (Typ) :
- 28 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- SC-100, SOT-669
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Power Dissipation :
- 105W
- Pulsed Drain Current-Max (IDM) :
- 356A
- Turn-Off Delay Time :
- 40 ns
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Factory Lead Time :
- 108 Weeks
- Pin Count :
- 4
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- MO-235
- JESD-609 Code :
- e3
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 25A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.007Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 105W Tc
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1773pF @ 25V
- Turn On Delay Time :
- 17 ns
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Datasheets
- BUK7Y07-30B,115

N-Channel Tape & Reel (TR) 7m Ω @ 25A, 10V ±20V 1773pF @ 25V 31nC @ 10V SC-100, SOT-669
BUK7Y07-30B,115 Overview
A device's maximum input capacitance is 1773pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 75A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 40 ns.Its maximum pulsed drain current is 356A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 30V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
BUK7Y07-30B,115 Features
a continuous drain current (ID) of 75A
the turn-off delay time is 40 ns
based on its rated peak drain current 356A.
BUK7Y07-30B,115 Applications
There are a lot of Nexperia USA Inc.
BUK7Y07-30B,115 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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