BUK7M9R9-60EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

9.9m Ω @ 15A, 10V

Pin Count :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2007pF @ 25V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reference Standard :

AEC-Q101; IEC-60134

Drain-source On Resistance-Max :

0.0099Ohm

Factory Lead Time :

26 Weeks

Number of Terminations :

4

Power Dissipation-Max :

79W Tc

Vgs(th) (Max) @ Id :

4V @ 1mA

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Continuous Drain Current (ID) :

60A

Series :

Automotive, AEC-Q101, TrenchMOS™

Terminal Position :

Single

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

240A

Operating Temperature :

-55°C~175°C TJ

Published :

2016

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

60V

DS Breakdown Voltage-Min :

60V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

45.4 mJ

Package / Case :

SOT-1210, 8-LFPAK33

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

30.1nC @ 10V

Operating Mode :

ENHANCEMENT MODE