BUK7M42-60EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

36W Tc

Factory Lead Time :

26 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

20A

Input Capacitance (Ciss) (Max) @ Vds :

508pF @ 25V

Avalanche Energy Rating (Eas) :

7.7 mJ

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G4

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.042Ohm

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SOT-1210, 8-LFPAK33

Drain to Source Voltage (Vdss) :

60V

Vgs(th) (Max) @ Id :

4V @ 1mA

Series :

Automotive, AEC-Q101, TrenchMOS™

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reference Standard :

AEC-Q101; IEC-60134

DS Breakdown Voltage-Min :

60V

Number of Elements :

1

Mounting Type :

Surface Mount

Terminal Position :

Single

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

78A

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

4

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Published :

2016

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Rds On (Max) @ Id, Vgs :

42m Ω @ 5A, 10V